2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V

Manufacturer: Toshiba
Product category: MOSFET
Technology: si
Installation style: SMD/SMT
Package/box: SOT-346-3
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- Drain-source breakdown voltage: 30 V.
Id- continuous drain current: 200ma
Rds On- drain-source on resistance: 2 Ohms
Vgs-gate-source voltage: - 20 V,+20 V
Vgs th- gate-source threshold voltage: 1.5 v.
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Pd- power dissipation: 200mw
Channel mode: Enhancement
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Toshiba
Configuration: Single
Forward transconductance-minimum: 100 mS
Height: 1.1 mm
Length: 2.9 mm
Product type: MOSFETs
Series: 2SK2009
Subcategory: Transistors
Transistor type: 1 N-Channel
Type: RF Small Signal MOSFET
Typical closing delay time: 0.12 us
Typical turn-on delay time: 0.06 us
Width: 1.5 mm
Unit weight: 12 mg

2SK2009.pdf