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July 18, 2025
Category Connection: Bias Resistor Transistor
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#transistor emitter resistor #IC Resistor Transistor #Pre biased Transistor
Brief: Discover the DMN2058UW-7 MOSFET from Diodes Incorporated, a high-performance N-Channel MOSFET designed for SMD/SMT applications. With a drain-source breakdown voltage of 20V and continuous drain current of 3.5A, this MOSFET is ideal for efficient power management. Learn more about its features and specifications in this video.
Related Product Features:
  • N-Channel MOSFET with 1 Channel configuration for efficient power switching.
  • Drain-source breakdown voltage of 20V ensures reliable performance under high voltage conditions.
  • Continuous drain current of 3.5A supports robust power handling.
  • Low drain-source on resistance of 42 mOhms minimizes power loss.
  • Gate-source voltage range of -12V to +12V offers flexible control options.
  • Wide operating temperature range from -55°C to +150°C for versatile applications.
  • Fast switching times with rise time of 4.9 ns and descending time of 3.3 ns.
  • Compact SOT-323-3 package with reel packaging for easy integration into automated assembly processes.
Faqs:
  • What is the maximum drain-source voltage for the DMN2058UW-7 MOSFET?
    The DMN2058UW-7 MOSFET has a maximum drain-source breakdown voltage of 20V, ensuring reliable operation in various circuits.
  • What is the continuous drain current rating of this MOSFET?
    This MOSFET can handle a continuous drain current of up to 3.5A, making it suitable for power management applications.
  • What is the operating temperature range for the DMN2058UW-7?
    The DMN2058UW-7 operates efficiently within a wide temperature range from -55°C to +150°C, accommodating diverse environmental conditions.
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