SI2306BDS-T1-GE3 Mosfet Ic 30V 4.0A 1.25W 47m Ohm Logic Level Fet

Manufacturer: Vishay
Product category: MOSFET
Technology: si
Installation style: SMD/SMT
Package/box: SOT-23-3
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- Drain-source breakdown voltage: 30 V.
Id- continuous drain current: 3.16a.
Rds On- drain-source on resistance: 47 mOhms.
Vgs-gate-source voltage: - 20 V,+20 V
Vgs th- gate-source threshold voltage: 3 V
Qg- gate charge: 3 nC
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Pd- power dissipation: 750 mW
Channel mode: Enhancement
Trade name: TrenchFET
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Vishay/Siliconix
Configuration: Single
Descending time: 6 ns
Product type: MOSFETs
Rise time: 12 ns
Series: SI2
Subcategory: Transistors
Transistor type: 1 N-Channel
Typical closing delay time: 14 ns
Typical turn-on delay time: 7 ns
Part number alias: SI2306BDS-T1-BE3 SI2306BDS-GE3-ge3
Unit weight: 8 mg

SI2306BDS-T1-GE3.pdf