NTJS4151PT1G MOSFET -20V -4.2A P-Channel

Manufacturer: onsemi
Product category: MOSFET
Technology: si
Installation style: SMD/SMT
Package/box: SC-88-6
Transistor polarity: p-channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 20 V.
Id- continuous drain current: 3.3a.
Rds On- drain-source on resistance: 205 mOhms
Vgs-gate-source voltage: - 12 V,+12 V
Vgs th- gate-source threshold voltage: 1.2 v.
Qg- gate charge: 10 nC
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Pd- power dissipation: 1 W
Channel mode: Enhancement
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: onsemi
Configuration: Single
Descending time: 4.2 ns
Forward transconductance-minimum: 12 S
Height: 0.9 mm
Length: 2mm
Product type: MOSFETs
Rise time: 1.7 ns
Series: NTJS4151P
Subcategory: Transistors
Transistor type: 1 P-Channel
Type: MOSFET
Typical closing delay time: 2.7 ns
Typical turn-on delay time: 0.85 ns
Width: 1.25mm
Unit weight: 6.200mg.

NTJS4151PT1G.PDF