2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW

Product Details:

Place of Origin:	Japan
Brand Name:	Toshiba
Model Number:	2SA1162-GR,LF

Payment & Shipping Terms:

Minimum Order Quantity:	1
Price:	USD 0.01-20/piece
Packaging Details:	SMD/SMT SC-59-3
Delivery Time:	5-8 work days
Payment Terms:	T/T

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Detailed Product Description

Product:	Bipolar Transistor-bipolar Junction Transistor (BJT)	Installation Style:	SMD/SMT
Package/box:	SC-59-3	Series:	2SA1162
Encapsulation:	Reel，Cut Tape，MouseReel	Product Type:	BJTs - Bipolar Transistors
Unit Weight:	8 Mg
Highlight:	2SA1162-GR LF Pnp Bipolar Junction Transistor , 50V 2SA1162-GR LF , 50V Pnp Bipolar Junction Transistor

Manufacturer: Toshiba
Product category: bipolar transistor-bipolar junction transistor (BJT)
Technology: si
Installation style: SMD/SMT
Package/box: SC-59-3
Transistor polarity: PNP
Configuration: Single
Maximum DC collector current: 150 mA
Maximum collector-emitter voltage VCEO: 50 V.
Collector-base voltage VCBO: 50 V
Emitter-base voltage VEBO: 5 V
Collector-emitter saturation voltage: 100 mV
Pd- power dissipation: 150 mW
Gain bandwidth product fT: 80 MHz
Maximum operating temperature:+125c
Qualification: AEC-Q101
Series: 2SA1162
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Toshiba
Dc collector/basegain hfemin: 70
Maximum DC current gain hFE: 400
Product type: BJTs-Bipolar Transistors
Subcategory: Transistors
Unit weight: 8 mg

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Tel: +8613652326683

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