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BSL207SP L6327 GaN field effect transistor P-Ch -20V 6A TSOP-6

BSL207SP L6327 GaN field effect transistor P-Ch -20V 6A TSOP-6

Product Details:
Place of Origin: Germany
Brand Name: Infineon
Model Number: BSL207SP L6327
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: USD 0.01-20/piece
Packaging Details: SMD/SMT TSOP-6
Delivery Time: 5-8 work days
Payment Terms: T/T
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Detailed Product Description
Product: GaN Field Effect Transistor Installation Style: SMD/SMT
Package/box: TSOP-6 Encapsulation: Reel,Cut Tape,MouseReel
Product Type: GaN FETs Series: BSL207
Unit Weight: 20 Mg
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Manufacturer: Infineon
Product category: GaN field effect transistor
Installation style: SMD/SMT
Package/box: TSOP-6
Transistor polarity: p-channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 20 V.
Id- continuous drain current: 6 A
Rds On- drain-source on resistance: 41mohms
Vgs-gate-source voltage: - 12 V,+12 V
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Pd- power dissipation: 2 W
Channel mode: Enhancement
Trademark: Infineon Technologies
Configuration: Single
Descending time: 53 ns
Package: Reel
Package: cuttape
Product type: ganfets
Rise time: 17 ns
Series: BSL207
Subcategory: Transistors
Technology: GaN
Typical closing delay time: 42 ns
Typical turn-on delay time: 9 ns
Part number alias: SP000095796 BSL207SPL6327HTSA1.
Unit weight: 20 mg

BSL207SP L6327.pdf

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