SDRAM - DDR Memory IC MT46V16M16P-5B:M 256Mbit Parallel 200 MHz 700 Ps 66-TSOP Electronic IC Chip

SDRAM - DDR Memory IC MT46V16M16P-5B:M 256Mbit Parallel 200 MHz 700 Ps 66-TSOP Electronic IC Chip

PRODUCT DESCRIPTION

Part number MT46V16M16P-5B:M is manufactured by Micron Technology Inc  and distributed by Stjk. As one of the leading distributors of electronic products, we carry many electronic components from the world's top manufacturers.

For more information on MT46V16M16P-5B:M detailed specifications, quotations, lead times, payment terms and more, please do not hesitate to contact us. In order to process your enquiry, please add the quantity MT46V16M16P-5B:M to your message. Send an email to stjkelec@hotmail.com for a quote now.

Features

• VDD = 2.5V ±0.2V, VDDQ = 2.5V ±0.2V

VDD = 2.6V ±0.1V, VDDQ = 2.6V ±0.1V (DDR400)1

• Bidirectional data strobe (DQS) transmitted/

received with data, that is, source-synchronous data

capture (x16 has two – one per byte)

• Internal, pipelined double-data-rate (DDR)

architecture; two data accesses per clock cycle

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; centeraligned with data for WRITEs

• DLL to align DQ and DQS transitions with CK

• Four internal banks for concurrent operation

• Data mask (DM) for masking write data

(x16 has two – one per byte)

• Programmable burst lengths (BL): 2, 4, or 8

• Auto refresh

– 64ms, 8192-cycle(AIT)

– 16ms, 8192-cycle (AAT)

• Self refresh (not available on AAT devices)

• Longer-lead TSOP for improved reliability (OCPL)

• 2.5V I/O (SSTL_2-compatible)

• Concurrent auto precharge option supported

• t

RAS lockout supported (t

RAP = t

RCD)

• AEC-Q100

• PPAP submission

• 8D response time