| Lugar de origen: | Estados Unidos |
| Nombre de la marca: | Diodes Incorporated |
| Número de modelo: | Se trata de un sistema de control de las emisiones. |
| Cantidad de orden mínima: | 1 |
|---|---|
| Precio: | USD 0.01-20/piece |
| Detalles de empaquetado: | SMD/SMT SOT-23-3 |
| Tiempo de entrega: | 5-8 días laborables |
| Condiciones de pago: | T/T |
| Producto: | Transistor bipolar-transistor de unión bipolar (BJT) | Estilo de instalación: | SMD/SMT |
|---|---|---|---|
| Paquete/caja: | Sot-23-3 | Tipo de producto: | TSPDS |
| Encapsulación: | Carrete, cinta cortada, carrete de ratón | Serie: | DP350T05 |
| Peso unitario: | magnesio 8 | ||
| Resaltar: | durable Bipolar Junction Transistor,robust Bipolar Junction Transistor |
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Manufacturer: Diodes Incorporated
Product category: bipolar transistor-bipolar junction transistor (BJT)
Technology: si
Installation style: SMD/SMT
Package/box: SOT-23-3
Transistor polarity: PNP
Configuration: Single
Maximum DC collector current: 500ma
Maximum collector-emitter voltage VCEO: 350 V.
Collector-base voltage vcbo: 350 v.
Emitter-base voltage VEBO: 5 V
Collector-emitter saturation voltage: 1 V
Pd- power dissipation: 300mw
Gain bandwidth product ft: 50mhz
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Series: DP 350 t 05
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Diodes Incorporated
Dc collector/basegain hfemin: 15
Height: 1 mm
Length: 3.05 mm
Product type: BJTs-Bipolar Transistors
Subcategory: Transistors
Width: 1.4 mm
Unit weight: 8 mg
Persona de Contacto: Hefengxin
Teléfono: +8613652326683