Place of Origin: | China |
Brand Name: | Diodes Incorporated |
Certification: | ISO9001 |
Model Number: | ZXMN10A07FTA |
Minimum Order Quantity: | >=2pcs |
---|---|
Price: | $1.66 |
Packaging Details: | Original factory sealed packing with standard types: tube,tray,tape and reel,box,bag packing. Or request for your need. |
Delivery Time: | 1-4Work Days |
Payment Terms: | L/C, D/A, D/P, Western Union, T/T, MoneyGram |
Supply Ability: | 60000 Acre/Acres Per 2-3Days |
Detailed Description: | MOSFET N-CH 100V 700MA SOT23-3 | Product Status: | Active |
---|---|---|---|
Package / Case: | SOT-23-3 | Technology: | MOSFET (Metal Oxide) |
Power Dissipation (Max): | 625mW (Ta) | Operating Voltage:: | ±20V |
Operating Temperature:: | -55°C ~ 150°C (TJ) | Base Product Number: | ZXMN10 |
High Light: | 625mW Electronic Passive Components,100V Electronic Passive Components,ZXMN10A07FTA |
PRODUCT DESCRIPTION
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
PRODUCT PROPERTIES
Product Status
|
Active
|
FET Type
|
N-Channel
|
Technology
|
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss)
|
100 V
|
Current - Continuous Drain (Id) @ 25°C
|
700mA (Ta)
|
Drive Voltage (Max Rds On, Min Rds On)
|
6V, 10V
|
Rds On (Max) @ Id, Vgs
|
700mOhm @ 1.5A, 10V
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
Gate Charge (Qg) (Max) @ Vgs
|
2.9 nC @ 10 V
|
Vgs (Max)
|
±20V
|
Input Capacitance (Ciss) (Max) @ Vds
|
138 pF @ 50 V
|
FET Feature
|
-
|
Power Dissipation (Max)
|
625mW (Ta)
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
Mounting Type
|
Surface Mount
|
Supplier Device Package
|
SOT-23-3
|
Package / Case
|
TO-236-3, SC-59, SOT-23-3
|
Base Product Number
|
ZXMN10
|
Contact Person: Tom Guo
Tel: +8613822899993
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