SI2323DDS-T1-GE3 MOSFET -20V Vds 8V Vgs SOT-23

Manufacturer: Vishay
Product category: MOSFET
Technology: si
Installation style: SMD/SMT
Package/box: SOT-23-3
Transistor polarity: p-channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 20 V.
Id- continuous drain current: 5.3a.
Rds On- drain-source on resistance: 39 mOhms
Vgs-gate-source voltage: - 8 V,+8 V
Vgs th- gate-source threshold voltage: 1 V
Qg- gate charge: 13.6 nC
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Pd- power dissipation: 1.7 W
Channel mode: Enhancement
Trade name: TrenchFET
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Vishay Semiconductors
Configuration: Single
Descending time: 11 ns
Height: 1.45 mm
Length: 2.9 mm
Product type: MOSFETs
Rise time: 22 ns
Series: SI2
Subcategory: Transistors
Transistor type: 1 P-Channel
Typical closing delay time: 52 ns
Typical turn-on delay time: 24 ns
Width: 1.6 mm
Part number alias: si2323dds-t1-be3
Unit weight: 8 mg