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FDB2614 TO-263 MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip

FDB2614 TO-263 MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip

  • FDB2614 TO-263  MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip
  • FDB2614 TO-263  MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip
  • FDB2614 TO-263  MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip
  • FDB2614 TO-263  MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip
FDB2614 TO-263  MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip
Product Details:
Place of Origin: China
Brand Name: FAIRCHILD
Certification: ISO9001
Model Number: FDB2614
Payment & Shipping Terms:
Minimum Order Quantity: >=1pcs
Price: request for need
Packaging Details: Roll tape (TR) Shear band (CT)
Delivery Time: 2-3days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 30000 Acre/Acres per Day+pcs+2-3days
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Detailed Product Description
Output Power: Standard Protocol: Standard
Operating Voltage: 4V Operating Temperature: -55 ℃--150 ℃

FDB2614 TO-263 MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip

 

PRODUCT DESCRIPTION

 

Part number FDB2614 is manufactured by FAIRCHILD and distributed by Stjk. As one of the leading distributors of electronic products, we carry many electronic components from the world's top manufacturers.

 

For more information on FDB2614 detailed specifications, quotations, lead times, payment terms and more, please do not hesitate to contact us. In order to process your enquiry, please add the quantity FDB2614 to your message. Send an email to stjkelec@hotmail.com for a quote now.

 

PRODUCT PROPERTIES

 

Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
27mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
99 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
7230 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
260W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number
FDB261

 

FDB2614 TO-263  MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip 0

FDB2614 TO-263  MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip 1

FDB2614 TO-263  MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip 2

FDB2614 TO-263  MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip 3

Contact Details
STJK(HK) ELECTRONICS CO.,LIMITED

Contact Person: Tom Guo

Tel: +8613822899993

Send your inquiry directly to us
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