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N Channel FET Discrete Semiconductor Devices IPN70R360P7S SOT-223 Silk Screen

N Channel FET Discrete Semiconductor Devices IPN70R360P7S SOT-223 Silk Screen

  • N Channel FET Discrete Semiconductor Devices IPN70R360P7S SOT-223 Silk Screen
  • N Channel FET Discrete Semiconductor Devices IPN70R360P7S SOT-223 Silk Screen
  • N Channel FET Discrete Semiconductor Devices IPN70R360P7S SOT-223 Silk Screen
  • N Channel FET Discrete Semiconductor Devices IPN70R360P7S SOT-223 Silk Screen
N Channel FET Discrete Semiconductor Devices IPN70R360P7S SOT-223 Silk Screen
Product Details:
Place of Origin: China
Brand Name: INFINEON
Certification: ISO9001
Model Number: IPN70R360P7S
Payment & Shipping Terms:
Minimum Order Quantity: >=2pcs
Price: $0.98
Packaging Details: Tape & Reel (TR) Cut Tape (CT) Digi-Reel
Delivery Time: 2-3days
Payment Terms: L/C, T/T, D/A, D/P, Western Union, MoneyGram
Supply Ability: 99000 Acre/Acres per Day+pcs+2-7days
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Detailed Product Description
Package / Case: TO-261-4 Mounting Type: Surface Mount Type
Operating Temperature: -40°C ~ 150°C(TJ) Drain Source Voltage (Vdss): 700 V
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FET Discrete Semiconductor Devices

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N Channel Discrete Semiconductor Devices

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ipn70r360p7s

IPN70R360P7S SOT-223 Silk Screen 70S360 N-Channel FET Brand New And Original Integrated Circuit Chip

 

PRODUCT DESCRIPTION

 

Part number IPN70R360P7S is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic products, we carry many electronic components from the world's top manufacturers.

 

For more information on IPN70R360P7S detailed specifications, quotations, lead times, payment terms and more, please do not hesitate to contact us. In order to process your enquiry, please add the quantity IPN70R360P7S to your message. Send an email to stjkelec@hotmail.com for a quote now.

 

PRODUCT PROPERTIES

 

Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
16.4 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
517 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
7.2W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223
Package / Case
TO-261-4, TO-261AA
Base Product Number
IPN70R360

 

N Channel FET Discrete Semiconductor Devices IPN70R360P7S SOT-223 Silk Screen 0

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N Channel FET Discrete Semiconductor Devices IPN70R360P7S SOT-223 Silk Screen 2

N Channel FET Discrete Semiconductor Devices IPN70R360P7S SOT-223 Silk Screen 3

Contact Details
STJK(HK) ELECTRONICS CO.,LIMITED

Contact Person: Tom Guo

Tel: +8613822899993

Send your inquiry directly to us
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