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UNR211300L Discrete Semiconductor Devices , Pre Biased Transistor 50V 100MA 80MHz 200MW

UNR211300L Discrete Semiconductor Devices , Pre Biased Transistor 50V 100MA 80MHz 200MW

  • UNR211300L Discrete Semiconductor Devices , Pre Biased Transistor 50V 100MA 80MHz 200MW
  • UNR211300L Discrete Semiconductor Devices , Pre Biased Transistor 50V 100MA 80MHz 200MW
  • UNR211300L Discrete Semiconductor Devices , Pre Biased Transistor 50V 100MA 80MHz 200MW
  • UNR211300L Discrete Semiconductor Devices , Pre Biased Transistor 50V 100MA 80MHz 200MW
UNR211300L Discrete Semiconductor Devices , Pre Biased Transistor 50V 100MA 80MHz 200MW
Product Details:
Brand Name: Panasonic Electronic Components
Certification: ISO9001
Model Number: UNR211300L
Payment & Shipping Terms:
Minimum Order Quantity: >=1pcs
Price: request for need
Packaging Details: Tape & Reel (TR) Cut Tape (CT) Digi-Reel
Delivery Time: 2-3days
Payment Terms: T/T/Escrow, L/C, D/A, D/P, Western Union, MoneyGram
Supply Ability: 100000 Acre/Acres per Day+pcs+1-2days
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Detailed Product Description
Detailed Description: TRANS PREBIAS PNP 200MW MINI3 Product Status: Active
Current - Collector (Ic) (Max): 100 MA Resistor - Base (R1): 47 KOhms
Current - Collector Cutoff (Max): 500nA Operating Temperature:: -55°C ~ 155°C
Frequency - Transition: 80 MHz Package / Case: TO-236-3, SC-59, SOT-23-3
High Light:

UNR211300L Discrete Semiconductor Devices

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80MHz Discrete Semiconductor Devices

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Pre Biased Transistor 50V

UNR211300L Pre-Biased Bipolar Transistor PNP - Pre-Biased 50 V 100 MA 80 MHz 200 MW

 

PRODUCT DESCRIPTION

 

Part number UNR211300L is manufactured by Panasonic Electronic Components and distributed by Stjk. As one of the leading distributors of electronic products, we carry many electronic components from the world's top manufacturers.

 

For more information on UNR211300L detailed specifications, quotations, lead times, payment terms and more, please do not hesitate to contact us. In order to process your enquiry, please add the quantity UNR211300L to your message. Send an email to stjkelec@hotmail.com for a quote now.

 

PRODUCT PROPERTIES

 

Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
47 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
80 MHz
Power - Max
200 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
Mini3-G1
Base Product Number
UNR211

 

UNR211300L Discrete Semiconductor Devices , Pre Biased Transistor 50V 100MA 80MHz 200MW 0

UNR211300L Discrete Semiconductor Devices , Pre Biased Transistor 50V 100MA 80MHz 200MW 1

UNR211300L Discrete Semiconductor Devices , Pre Biased Transistor 50V 100MA 80MHz 200MW 2

UNR211300L Discrete Semiconductor Devices , Pre Biased Transistor 50V 100MA 80MHz 200MW 3

Contact Details
STJK(HK) ELECTRONICS CO.,LIMITED

Contact Person: Tom Guo

Tel: +8613822899993

Send your inquiry directly to us
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